BLF4G10LS-160,112 NXP Semiconductors, BLF4G10LS-160,112 Datasheet
BLF4G10LS-160,112
Specifications of BLF4G10LS-160,112
934058738112
BLF4G10LS-160
BLF4G10LS-160
Related parts for BLF4G10LS-160,112
BLF4G10LS-160,112 Summary of contents
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... BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 — 19 June 2007 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. RF performance at T Mode of operation f CW 2-tone GSM EDGE [1] ACPR CAUTION This device is sensitive to ElectroStatic Discharge (ESD) ...
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... RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pin [1] Connected to flange 3. Ordering information Table 3. Type number BLF4G10LS-160 - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg ...
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... Mode of operation: 2-tone 900 mA Symbol Parameter IMD3 IMD5 IMD7 7.1 Ruggedness in class-AB operation The BLF4G10LS-160 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 900 mA BLF4G10LS-160_1 Product data sheet Characteristics Conditions drain-source breakdown V voltage gate-source threshold voltage V ...
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... RF gain grouping = 894.2 MHz 2 Gain (dB) for two-tone Min 18.5 19 19.5 20 20.5 001aag546 (%) (dB 160 240 P ( case Fig 2. Two-tone power gain and drain efficiency as Rev. 01 — 19 June 2007 BLF4G10LS-160 UHF power LDMOS transistor Max 19 19 900 mA case f = 894 MHz. functions of average load power; typical values ...
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... I Fig 4. IMD3 as a function of average load power; 001aag550 50 D (%) ACPR (dBc 100 P (W) L(AV case Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as Rev. 01 — 19 June 2007 BLF4G10LS-160 UHF power LDMOS transistor L(AV 894 MHz. DS case = 800 mA 900 mA. ...
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... Fig 8. GSM EDGE ACPR and rms EVM as functions of 001aag554 40 D (%) (dB (dBm) L(AV) ( 869 MHz. ( 881.5 MHz. ( 894 MHz. Fig 10. CDMA power gain as a function of average load Rev. 01 — 19 June 2007 BLF4G10LS-160 UHF power LDMOS transistor 56 60 ACPR 400 64 68 EVM rms 900 mA case f = 894 MHz. drain effi ...
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... Fig 12. Circuit schematic for 894 MHz production test circuit BLF4G10LS-160_1 Product data sheet 35 ACPR (dBc) 45 ACPR 55 750 65 ACPR 1980 881.5 MHz. case Rev. 01 — 19 June 2007 BLF4G10LS-160 UHF power LDMOS transistor 001aag556 (dBm) L(AV C10 out L10 001aag557 © NXP B.V. 2007. All rights reserved ...
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... Rev. 01 — 19 June 2007 BLF4G10LS-160 UHF power LDMOS transistor 6.15 and r and Figure 13). Value Remarks [1] ...
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... Fig 14. Circuit schematic for 869 MHz to 894 MHz CDMA demo test circuit BLF4G10LS-160_1 Product data sheet List of components (see Figure 12 Description stripline stripline SMD resistor Rev. 01 — 19 June 2007 BLF4G10LS-160 UHF power LDMOS transistor and Figure 13). …continued Value Remarks [ 0.914 mm [ 0.914 mm 5 C10 C11 L6 L7 ...
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... Rev. 01 — 19 June 2007 BLF4G10LS-160 UHF power LDMOS transistor V ( C10 L7 L8 and Figure 15). Value Remarks [ [1] 1 ...
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... Description stripline SMD resistor SMD resistor potentiometer SMD resistor SMD resistor SMD resistor SMD resistor SMD resistor SMD resistor voltage regulator transistor BLF4G10-160 Rev. 01 — 19 June 2007 BLF4G10LS-160 UHF power LDMOS transistor and Figure 15). …continued Value Remarks [ 0.914 mm 430 300 200 ...
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... REFERENCES JEDEC JEITA Rev. 01 — 19 June 2007 BLF4G10LS-160 UHF power LDMOS transistor 3.38 1.70 34.16 9.91 27.94 0.25 3 ...
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... Laterally Diffused Metal-Oxide Semiconductor Transistor Peak-to-Average power Ratio Radio Frequency Root Mean Square Surface-Mount Device Voltage Standing-Wave Ratio Data sheet status Product data sheet Rev. 01 — 19 June 2007 BLF4G10LS-160 UHF power LDMOS transistor Change notice Supersedes - - © NXP B.V. 2007. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 19 June 2007 BLF4G10LS-160 UHF power LDMOS transistor © NXP B.V. 2007. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF4G10LS-160_1 All rights reserved. Date of release: 19 June 2007 ...