BLF4G10LS-160,112 NXP Semiconductors, BLF4G10LS-160,112 Datasheet - Page 5

• Manufacturer Part Number: BLF4G10LS-160,112
• Description: BASESTATION FINAL 1GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10LS-160,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 894.2MHz
• Gain: 19.7dB
• Voltage - Rated: 65V
• Current Rating: 15A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 160W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2392; 934058738112; BLF4G10LS-160; BLF4G10LS-160

NXP Semiconductors
BLF4G10LS-160_1
Product data sheet
Fig 3. Intermodulation distortion a function of
Fig 5. GSM EDGE power gain and drain efficiency as
(dBc)
IMD
(dB)
G
p
20
40
60
80
21
20
19
18
17
16
0
V
f = 894 MHz.
average load power; typical values
V
f = 894 MHz.
functions of average load power; typical values
0
0
DS
DS
= 28 V; I
= 28 V; I
G
D
p
20
Dq
Dq
40
= 900 mA; T
= 900 mA; T
40
60
case
case
80
= 25 C;
= 25 C;
P
L(AV)
80
P
001aag548
001aag550
L(AV)
IMD3
IMD5
IMD7
(W)
(W)
120
100
Rev. 01 — 19 June 2007
50
40
30
20
10
0
(%)
D
Fig 4. IMD3 as a function of average load power;
Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as
ACPR
IMD3
(dBc)
(dBc)
(1) I
(2) I
(3) I
(4) I
20
40
60
80
50
60
70
80
0
V
typical values
V
f = 894 MHz.
a function of average load power; typical values
Dq
Dq
Dq
Dq
0
0
DS
DS
= 800 mA.
= 900 mA.
= 1000 mA.
= 1100 mA.
= 28 V; T
= 28 V; I
20
1
2
3
4
Dq
case
40
= 900 mA; T
BLF4G10LS-160
= 25 C; f = 894 MHz.
ACPR
ACPR
40
UHF power LDMOS transistor
400
600
60
case
80
= 25 C;
P
L(AV)
© NXP B.V. 2007. All rights reserved.
80
P
001aag549
001aag551
L(AV)
(W)
(W)
120
100
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