BLF4G10LS-160,112 NXP Semiconductors, BLF4G10LS-160,112 Datasheet - Page 7

• Manufacturer Part Number: BLF4G10LS-160,112
• Description: BASESTATION FINAL 1GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10LS-160,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 894.2MHz
• Gain: 19.7dB
• Voltage - Rated: 65V
• Current Rating: 15A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 160W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2392; 934058738112; BLF4G10LS-160; BLF4G10LS-160

NXP Semiconductors
8. Test information
BLF4G10LS-160_1
Product data sheet
Fig 11. CDMA ACPR at 750 kHz and at 1980 kHz as functions of average load power; typical values, measured in a
Fig 12. Circuit schematic for 894 MHz production test circuit
V
CDMA demo test circuit
See
DS
RF in
= 28 V; I
Table 9
L1
for a list of components
Dq
C1
= 1100 mA; T
L2
V
bias
C5
C2
ACPR
case
(dBc)
R1
L3
35
45
55
65
75
= 25 C; f = 881.5 MHz.
28
C6
32
L4
Rev. 01 — 19 June 2007
ACPR
ACPR
1980
36
750
L5
40
L6
L7
P
44
L(AV)
001aag556
(dBm)
C7
48
C8
L8
BLF4G10LS-160
UHF power LDMOS transistor
C9
V
DD
L9
C3
C10
C4
© NXP B.V. 2007. All rights reserved.
L10
001aag557
RF out
7 of 15