BLF4G10LS-160,112 NXP Semiconductors, BLF4G10LS-160,112 Datasheet - Page 9

• Manufacturer Part Number: BLF4G10LS-160,112
• Description: BASESTATION FINAL 1GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10LS-160,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 894.2MHz
• Gain: 19.7dB
• Voltage - Rated: 65V
• Current Rating: 15A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 160W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2392; 934058738112; BLF4G10LS-160; BLF4G10LS-160

NXP Semiconductors
BLF4G10LS-160_1
Product data sheet
Fig 14. Circuit schematic for 869 MHz to 894 MHz CDMA demo test circuit
V
bias
See
(12 V - 28 V)
Table 10
C3
R10
RF in
Q1
for a list of components
R9
C4
L1
Table 9.
[1]
[2]
Component
L9
L10
R1
Q2
R6
C1
R1
American Technical Ceramics type 100B or capacitor of same quality.
The striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) with
thickness = 0.635 mm.
R7
L2
R2
R4
List of components (see
R5
C5
R8
R3
Description
stripline
stripline
SMD resistor
L3
C6
Rev. 01 — 19 June 2007
C7
C2
L4
L5
Figure 12
Q3
Value
5.1
and
L6
L7
Figure
[2]
[2]
Remarks
(W
(W
C8
BLF4G10LS-160
13).
UHF power LDMOS transistor
C9
L) 0.914 mm
L) 0.914 mm
L8
…continued
C10
V
DD
(28 V)
L9
C11
© NXP B.V. 2007. All rights reserved.
C12
19.126 mm
6.858 mm
L10
r
001aag559
= 6.15 and
RF out
9 of 15