BLF4G10LS-160,112 NXP Semiconductors, BLF4G10LS-160,112 Datasheet - Page 13

• Manufacturer Part Number: BLF4G10LS-160,112
• Description: BASESTATION FINAL 1GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10LS-160,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 894.2MHz
• Gain: 19.7dB
• Voltage - Rated: 65V
• Current Rating: 15A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 160W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2392; 934058738112; BLF4G10LS-160; BLF4G10LS-160

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 12.
BLF4G10LS-160_1
Product data sheet
Document ID
BLF4G10LS-160_1
Revision history
Table 11.
Acronym
ACPR
CDMA
CW
EDGE
EVM
GSM
IS-95
LDMOS
LDMOST
PAR
RF
RMS
SMD
VSWR
Release date
20070619
Abbreviations
Data sheet status
Product data sheet
Rev. 01 — 19 June 2007
Description
Adjacent Channel Power Ratio
Code Division Multiple Access
Continuous Waveform
Enhanced Data GSM Environment
Error Vector Magnitude
Global System for Mobile communications
CDMA Interim Standard 95
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Radio Frequency
Root Mean Square
Surface-Mount Device
Voltage Standing-Wave Ratio
Change notice
-
BLF4G10LS-160
UHF power LDMOS transistor
© NXP B.V. 2007. All rights reserved.
Supersedes
-
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