BFG541,115 NXP Semiconductors, BFG541,115 Datasheet - Page 2
BFG541,115
Manufacturer Part Number
BFG541,115
Description
TRANS NPN 15V 9GHZ SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BFG541115.pdf
(14 pages)
Specifications of BFG541,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.4dB @ 900MHz
Power - Max
650mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 40mA, 8V
Current - Collector (ic) (max)
120mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 40mA @ 8V
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.12 A
Power Dissipation
650 mW
Maximum Operating Temperature
+ 175 C
Dc
08+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1984-2
934018870115
BFG541 T/R
934018870115
BFG541 T/R
NXP Semiconductors
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
DESCRIPTION
NPN silicon planar epitaxial
transistor, intended for wideband
applications in the GHz range, such
as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, satellite TV tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optic systems.
The transistors are mounted in a
plastic SOT223 envelope.
September 1995
excellent reliability.
NPN 9 GHz wideband transistor
PINNING
PIN
1
2
3
4
emitter
base
emitter
collector
DESCRIPTION
2
lfpage
Top view
Fig.1 SOT223.
1
Product specification
2
BFG541
4
MSB002 - 1
3