BFG541,115 NXP Semiconductors, BFG541,115 Datasheet - Page 6
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BFG541,115
Manufacturer Part Number
BFG541,115
Description
TRANS NPN 15V 9GHZ SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BFG541115.pdf
(14 pages)
Specifications of BFG541,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.4dB @ 900MHz
Power - Max
650mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 40mA, 8V
Current - Collector (ic) (max)
120mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 40mA @ 8V
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.12 A
Power Dissipation
650 mW
Maximum Operating Temperature
+ 175 C
Dc
08+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1984-2
934018870115
BFG541 T/R
934018870115
BFG541 T/R
NXP Semiconductors
In Figs 6 to 9, G
maximum stable gain; G
September 1995
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
V
I
C
CE
gain
(dB)
gain
(dB)
= 10 mA; V
Fig.6 Gain as a function of collector current.
= 8 V; f = 900 MHz.
25
20
15
10
50
40
30
20
10
5
0
0
10
0
Fig.8 Gain as a function of frequency.
MSG
CE
= 8 V.
UM
20
= maximum power gain; MSG =
MSG
10
2
G UM
max
G max
G UM
40
= maximum available gain.
10
3
G max
60
f (MHz)
I C (mA)
MRA660
MRA658
80
10
4
6
handbook, halfpage
handbook, halfpage
V
I
C
CE
gain
(dB)
gain
(dB)
= 40 mA; V
Fig.7 Gain as a function of collector current.
= 8 V; f = 2 GHz.
25
20
15
10
50
40
30
20
10
5
0
0
10
0
Fig.9 Gain as a function of frequency.
CE
= 8 V.
MSG
20
G UM
10
2
G max
G UM
40
10
3
Product specification
G max
60
f (MHz)
I C (mA)
BFG541
MRA659
MRA661
80
10
4