BFG541,115 NXP Semiconductors, BFG541,115 Datasheet - Page 9
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BFG541,115
Manufacturer Part Number
BFG541,115
Description
TRANS NPN 15V 9GHZ SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BFG541115.pdf
(14 pages)
Specifications of BFG541,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.4dB @ 900MHz
Power - Max
650mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 40mA, 8V
Current - Collector (ic) (max)
120mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 40mA @ 8V
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.12 A
Power Dissipation
650 mW
Maximum Operating Temperature
+ 175 C
Dc
08+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1984-2
934018870115
BFG541 T/R
934018870115
BFG541 T/R
NXP Semiconductors
September 1995
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
Z
I
C
C
o
= 40 mA; V
= 40 mA; V
= 50 .
CE
CE
= 8 V.
= 8 V.
Fig.17 Common emitter forward transmission coefficient (S
180°
180°
Fig.16 Common emitter input reflection coefficient (S
50
40 MHz
0
−135°
−135°
135°
135°
40
0.2
0.2
0.2
30
0.5
0.5
20
0.5
10
3 GHz
−90°
−90°
90°
90°
9
1
1
1
3 GHz
40 MHz
2
2
2
5
−45°
−45°
45°
45°
5
5
MRA662
MRA663
11
).
0°
0°
21
).
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFG541