BFG541,115 NXP Semiconductors, BFG541,115 Datasheet - Page 3

• Manufacturer Part Number: BFG541,115
• Description: TRANS NPN 15V 9GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG541,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 650mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 40mA @ 8V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 650 mW
• Maximum Operating Temperature: + 175 C
• Dc: 08+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1984-2; 934018870115; BFG541 T/R

NXP Semiconductors
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. T
September 1995
V
V
I
P
h
C
f
G
S
F
P
ITO
V
V
V
I
P
T
T
R
SYMBOL
C
T
C
SYMBOL
SYMBOL
FE
stg
j
CBO
CES
tot
L1
CBO
CES
EBO
tot
NPN 9 GHz wideband transistor
re
th j-s
UM
21

s
2
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
thermal resistance from junction to
soldering point
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
PARAMETER
open emitter
R
up to T
I
I
I
T
I
T
I
T
I
T

f = 900 MHz; T
I
f = 900 MHz; T
I
f = 900 MHz; T
C
C
C
C
C
C
C
C
amb
amb
amb
amb
s
BE
= 40 mA; V
= 0; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
= 
open emitter
R
open collector
up to T
up to T
= 0
= 25 C
= 25 C
= 25 C
= 25 C
BE
opt
s
CB
= 0
= 140 C; note 1
; I
3
C
s
s
= 8 V; f = 1 MHz
CONDITIONS
= 10 mA; V
= 140 C; note 1
= 140 C; note 1
CE
CE
CE
CE
CE
CE
CE
amb
amb
amb
CONDITIONS
CONDITIONS
= 8 V; T
= 8 V; f = 1 GHz;
= 8 V; f = 900 MHz;
= 8 V; f = 2 GHz;
= 8 V; f = 900 MHz;
= 8 V; R
= 8 V; R
= 25 C
= 25 C
= 25 C
CE
L
L
j
= 25 C
= 8 V;
= 50 
= 50 




60




13



MIN.





65

THERMAL RESISTANCE
MIN.




120
0.7
9
15
9
14
1.3
21
34
TYP.
Product specification
55 K/W
20
15
2.5
120
650
150
175
MAX.
20
15
120
650
250





1.8


BFG541
MAX.
V
V
V
mA
mW
C
C
UNIT
V
V
mA
mW
pF
GHz
dB
dB
dB
dB
dBm
dBm
UNIT