BFG591,115 NXP Semiconductors, BFG591,115 Datasheet - Page 11

• Manufacturer Part Number: BFG591,115
• Description: TRANS NPN 15V 7GHZ SOT-223
• Manufacturer: NXP Semiconductors

Specifications of BFG591,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 7GHz
• Power - Max: 2W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 70mA, 8V
• Current - Collector (ic) (max): 200mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 70mA @ 8V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 7000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1985-2; 934023010115; BFG591 T/R

NXP Semiconductors
PACKAGE OUTLINE
1995 Sep 04
Plastic surface-mounted package with increased heatsink; 4 leads
NPN 7 GHz wideband transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT223
1.8
1.5
A
0.10
0.01
A
1
1
y
0.80
0.60
b
p
IEC
e
3.1
2.9
1
b
1
b
0.32
0.22
D
1
e
c
2
b
6.7
6.3
D
p
JEDEC
4
3.7
3.3
E
REFERENCES
3
0
4.6
e
w
B
M
2.3
e
SC-73
B
JEITA
scale
1
11
2
c
H
7.3
6.7
E
A
4 mm
1.1
0.7
L
1
p
0.95
0.85
Q
0.2
v
H
E
E
detail X
0.1
w
PROJECTION
EUROPEAN
0.1
y
A
L
p
Q
Product specification
X
ISSUE DATE
04-11-10
06-03-16
v
A
BFG591
M
A
SOT223