BFG591,115 NXP Semiconductors, BFG591,115 Datasheet - Page 2

• Manufacturer Part Number: BFG591,115
• Description: TRANS NPN 15V 7GHZ SOT-223
• Manufacturer: NXP Semiconductors

Specifications of BFG591,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 7GHz
• Power - Max: 2W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 70mA, 8V
• Current - Collector (ic) (max): 200mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 70mA @ 8V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 7000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1985-2; 934023010115; BFG591 T/R

NXP Semiconductors
FEATURES
 High power gain
 Low noise figure
 High transition frequency
 Gold metallization ensures
APPLICATIONS
Intended for applications in the GHz
range such as MATV or CATV
amplifiers and RF communications
subscriber equipment.
QUICK REFERENCE DATA
Note
1. T
1995 Sep 04
V
V
I
P
h
C
f
G
SYMBOL
C
T
s
FE
excellent reliability.
CBO
CEO
tot
NPN 7 GHz wideband transistor
re
UM
21
s
2
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power
gain
insertion power gain
PARAMETER
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic, 4-pin SOT223 package.
PINNING
open emitter
open base
up to T
I
I
I
I
f = 900 MHz; T
I
f = 900 MHz; T
C
C
C
C
C
= 70 mA; V
= I
= 70 mA; V
= 70 mA; V
= 70 mA; V
PIN
1
2
3
4
c
= 0; V
s
= 80 C; note 1
emitter
base
emitter
collector
CONDITIONS
CE
CE
CE
CE
CE
amb
amb
= 12 V; f = 1 MHz
DESCRIPTION
= 8 V
= 12 V; f = 1 GHz
= 12 V;
= 12 V;
2
= 25 C
= 25 C




60




lfpage
MIN.
Top view




90
0.7
7
13
12
TYP.
Fig.1 SOT223.
1
Product specification
20
15
200
2
250




MAX.
2
BFG591
4
MSB002 - 1
V
V
mA
W
pF
GHz
dB
dB
UNIT
3