BFG591,115 NXP Semiconductors, BFG591,115 Datasheet - Page 7

• Manufacturer Part Number: BFG591,115
• Description: TRANS NPN 15V 7GHZ SOT-223
• Manufacturer: NXP Semiconductors

Specifications of BFG591,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 7GHz
• Power - Max: 2W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 70mA, 8V
• Current - Collector (ic) (max): 200mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 70mA @ 8V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 7000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1985-2; 934023010115; BFG591 T/R

NXP Semiconductors
1995 Sep 04
handbook, halfpage
NPN 7 GHz wideband transistor
V
(dB)
CE
d im
Fig.9
−20
−30
−40
−50
−60
−70
= 12 V; V
0
o
Intermodulation distortion as a function
of collector current; typical values.
= 700 mV; f
40
(p+q-r)
= 793.25 MHz.
80
I
C
(mA)
MGC797
120
7
handbook, halfpage
V
Fig.10 Second order Intermodulation distortion as
(dB)
CE
d 2
−20
−30
−40
−50
−60
−70
= 12 V; V
0
a function of collector current; typical values.
o
= 316 mV; f
40
(p+q)
= 810 MHz.
80
Product specification
I
C
(mA)
BFG591
MGC798
120