MRF5812R2 Microsemi Power Products Group, MRF5812R2 Datasheet
MRF5812R2
Specifications of MRF5812R2
MRF5812R2MITR
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MRF5812R2 Summary of contents
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Features Low Noise - 2 500 MHZ Associated Gain = 15 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to ...
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ELECTRICAL SPECIFICATIONS (Tcase = 25 C) STATIC (off) Symbol BVCEO Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc BVCBO Collector-Base Breakdown Voltage (IC = 1.0 mAdc BVEBO Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC ...
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FUNCTIONAL Symbol Minimum Noise Figure NFmin ( mAdc, VCE = 10 Vdc 500 MHz) G Power Gain @ Nfmin NF ( mAdc, VCE = 10 Vdc 500 MHz) G Maximum Unilateral Gain ...
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SO-8 MRF4427, R2 TO-39 2N4427 POWER MACRO MRF553 POWER MACRO MRF553T TO-39 MRF607 TO-39 2N6255 TO-72 2N5179 MACRO X MRF559 MACRO X MRF559 TO-39 2N3866A SO-8 MRF3866, R1, R2 NPN 400 POWER MACRO MRF555 POWER MACRO MRF555T MACRO X MRF559 ...
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Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. 4. MRF5812, ...