MRF5812R2 Microsemi Power Products Group, MRF5812R2 Datasheet - Page 2

• Manufacturer Part Number: MRF5812R2
• Description: TRANS NPN 15V 200MA 8-SOIC
• Manufacturer: Microsemi Power Products Group

Specifications of MRF5812R2

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2dB ~ 3dB @ 500MHz
• Gain: 13dB ~ 15.5dB
• Power - Max: 1.25W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 50mA, 5V
• Current - Collector (ic) (max): 200mA
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MRF5812R2MITR; MRF5812R2MITR

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25 C)
STATIC
(off)
DYNAMIC
(on)
Symbol
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
COB
HFE
Ftau
DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc)
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, VBE = 0 Vdc)
Emitter Cutoff Current
(VCE = 2.0 Vdc, VBE = 0 Vdc)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Current-Gain Bandwidth Product
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
Test Conditions
Test Conditions
Min.
Min.
2.5
50
15
30
-
-
-
-
MRF5812G, R1, R2
MRF5812, R1, R2
Value
Value
Typ.
Typ.
1.4
5.0
-
-
-
-
-
Max.
Max.
200
0.1
0.1
2.0
-
-
-
-
Rev A 9/2005
Unit
GHz
Unit
Vdc
Vdc
Vdc
mA
mA
pF