MPSH10_D26Z Fairchild Semiconductor, MPSH10_D26Z Datasheet - Page 3
![TRANS RF NPN 25V 50MA TO-92](/photos/5/41/54198/to-92_pkg_sml.jpg)
MPSH10_D26Z
Manufacturer Part Number
MPSH10_D26Z
Description
TRANS RF NPN 25V 50MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.MPSH10.pdf
(14 pages)
Specifications of MPSH10_D26Z
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
25V
Frequency - Transition
650MHz
Power - Max
350mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 4mA, 10V
Current - Collector (ic) (max)
50mA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
650 MHz (Min)
Collector- Emitter Voltage Vceo Max
25 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
50 mA
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
60 @ 4mA @ 10V
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Typical Characteristics
100
0.1
10
80
60
40
20
0.9
0.8
0.7
0.6
0.5
0.4
0.3
1
0
0.1
1
25
0.1
Voltage vs Collector Current
V
Typical Pulsed Current Gain
CE
V
0.2
CB
Base-Emitter Saturation
vs Ambient Temperature
Collector-Cutoff Current
= 5V
= 10
= 30V
I
T - AMBIENT TEMPERATURE ( C)
vs Collector Current
125 °C
C
I - COLLECTOR CURRENT (mA)
50
- 40 °C
25 °C
- 40 °C
C
A
- COLLECTOR CURRENT (mA)
0.5
1
75
25 °C
1
2
125 °C
100
5
10
125
°
10
20
20
150
50
0.8
0.6
0.4
0.2
350
300
250
200
150
100
0.15
0.05
50
0.2
0.1
1
0.01
0
0
0.1
SOT-23
V
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector-Emitter Saturation
CE
- 40 °C
= 5V
25
I
Ambient Temperature
= 10
I
Power Dissipation vs
C
C
Collector Current
0.1
- COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
- 40 °C
TEMPERATURE ( C)
50
25 °C
1
NPN RF Transistor
75
25 °C
1
TO-92
100
o
125 °C
125 °C
10
125
10
(continued)
150
20
100