BFQ149,115 NXP Semiconductors, BFQ149,115 Datasheet - Page 2

• Manufacturer Part Number: BFQ149,115
• Description: TRANS PNP 15V 100MA SOT89
• Manufacturer: NXP Semiconductors

Specifications of BFQ149,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1W
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: PNP
• Frequency - Transition: 5GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 70mA, 10V
• Noise Figure (db Typ @ F): 3.75dB @ 500MHz
• Dc Current Gain Hfe Max: 20 @ 70mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: PNP
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933897220115::BFQ149 T/R::BFQ149 T/R

NXP Semiconductors
DESCRIPTION
PNP transistor in a SOT89 envelope.
It is intended for use in
UHF applications such as broadband
aerial amplifiers (30 to 860 MHz) and
in microwave amplifiers such as radar
systems, spectrum analysers, etc.,
using SMD technology.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
V
I
P
h
f
G
F
V
V
V
I
I
P
T
T
SYMBOL
SYMBOL
C
T
C
CM
FE
stg
j
CEO
tot
CBO
CEO
EBO
tot
PNP 5 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
PARAMETER
PARAMETER
PINNING
PIN
1
2
3
Rev. 03 - 28 September 2007
open base
up to T
I
I
f = 500 MHz; T
I
f = 500 MHz; T
I
R
T
open emitter
open base
open collector
f
up to T
C
C
C
C
amb
s
emitter
collector
base
= 70 mA; V
= 75 mA; V
= 50 mA; V
= 50 mA; V
= 60
1 MHz
Code: FG
= 25 C
DESCRIPTION
s
s
= 135 C (note 1)
= 135 C (note 1)
f = 500 MHz;
CONDITIONS
CONDITIONS
CE
CE
j
CE
amb
CE
= 25 C
= 10 V; T
= 10 V;
= 10 V;
= 10 V;
= 25 C
j
= 25 C 20
4
MIN.
65
MIN.
Fig.1 SOT89.
3
Product specification
50
5
12
3.75
TYP.
1
150
150
2
20
15
3
100
150
MAX.
BFQ149
1
1
MAX. UNIT
15
100
2 of 7
V
V
V
mA
mA
W
C
C
UNIT
V
mA
W
GHz
dB
dB