BFQ149,115 NXP Semiconductors, BFQ149,115 Datasheet - Page 4

• Manufacturer Part Number: BFQ149,115
• Description: TRANS PNP 15V 100MA SOT89
• Manufacturer: NXP Semiconductors

Specifications of BFQ149,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1W
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: PNP
• Frequency - Transition: 5GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 70mA, 10V
• Noise Figure (db Typ @ F): 3.75dB @ 500MHz
• Dc Current Gain Hfe Max: 20 @ 70mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: PNP
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933897220115::BFQ149 T/R::BFQ149 T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
PNP 5 GHz wideband transistor
I
Fig.2
V
Fig.4
E
h
(pF)
CE
C c
= 0; f = 1 MHz; T
FE
= 10 V; T
80
60
40
20
0
4
3
2
1
0
0
0
Collector capacitance as a function of
collector-base voltage.
DC current gain as a function of collector
current.
j
= 25 C.
j
= 25 C.
100
10
I
V CB (V)
C
(mA)
MBB345
MEA328
Rev. 03 - 28 September 2007
200
20
handbook, halfpage
handbook, halfpage
(GHz)
Fig.3
G UM
I
Fig.5
V
(dB)
c
CE
T f
= 50 mA; V
= 10 V; f = 500 MHz; T
40
30
20
10
4
0
8
6
2
0
10
0
Transition frequency as a function of
collector current.
Maximum unilateral power gain as a
function of frequency.
CE
= 10 V; T
10
2
amb
amb
= 25 C.
= 25 C.
50
10
3
I
Product specification
C
(mA)
f (MHz)
BFQ149
MEA329
MBB347
100
10
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