BFQ149,115 NXP Semiconductors, BFQ149,115 Datasheet - Page 3

• Manufacturer Part Number: BFQ149,115
• Description: TRANS PNP 15V 100MA SOT89
• Manufacturer: NXP Semiconductors

Specifications of BFQ149,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1W
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: PNP
• Frequency - Transition: 5GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 70mA, 10V
• Noise Figure (db Typ @ F): 3.75dB @ 500MHz
• Dc Current Gain Hfe Max: 20 @ 70mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: PNP
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933897220115::BFQ149 T/R::BFQ149 T/R

NXP Semiconductors
THERMAL RESISTANCE
Note
1. T
CHARACTERISTICS
T
Note
1. G
R
I
h
f
C
C
C
G
F
SYMBOL
SYMBOL
j
CBO
T
FE
= 25 C unless otherwise specified.
PNP 5 GHz wideband transistor
th j-s
c
e
re
UM
G
s
UM
UM
is the temperature at the soldering point of the collector tab.
is the maximum unilateral power gain, assuming S
=
10
thermal resistance from junction to
soldering point
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
log
------------------------------------------------------------- - dB.
1
–
S
PARAMETER
PARAMETER
11
S
2
21
1
2
–
S
22
2
Rev. 03 - 28 September 2007
I
I
I
f = 500 MHz; T
I
I
I
I
f = 500 MHz; T
I
R
T
E
C
C
E
C
C
C
C
amb
s
= 0; V
= 0; V
= 70 mA; V
= 70 mA; V
= 0; V
= 0; V
= 50 mA; V
= 50 mA; V
up to T
= 60
= 25 C
12
CB
CB
EB
CE
is zero and
s
CONDITIONS
CONDITIONS
= 10 V;
= 10 V; f = 1 MHz
= 0.5 V; f = 1 MHz
= 10 V; f = 1 MHz
f = 500 MHz;
= 135 C (note 1)
amb
amb
CE
CE
CE
CE
= 10 V
= 10 V;
= 10 V;
= 10 V;
= 25 C
= 25 C
THERMAL RESISTANCE
20
4
MIN. TYP. MAX.
50
5
2
4
1.7
12
3.75
Product specification
40 K/W
BFQ149
100
3 of 7
nA
GHz
pF
pF
pF
dB
dB
UNIT