BFQ149,115 NXP Semiconductors, BFQ149,115 Datasheet - Page 3
![TRANS PNP 15V 100MA SOT89](/photos/5/27/52758/568-mpt3_sot-89-3_sc-62_to-243-3_sot89_sml.jpg)
BFQ149,115
Manufacturer Part Number
BFQ149,115
Description
TRANS PNP 15V 100MA SOT89
Manufacturer
NXP Semiconductors
Datasheet
1.BFQ149115.pdf
(7 pages)
Specifications of BFQ149,115
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Mounting Type
Surface Mount
Power - Max
1W
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
15V
Transistor Type
PNP
Frequency - Transition
5GHz
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 70mA, 10V
Noise Figure (db Typ @ F)
3.75dB @ 500MHz
Dc Current Gain Hfe Max
20 @ 70mA @ 10V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
PNP
Maximum Operating Frequency
5000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
0.1 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933897220115::BFQ149 T/R::BFQ149 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BFQ149,115
Manufacturer:
NXP
Quantity:
4 500
NXP Semiconductors
THERMAL RESISTANCE
Note
1. T
CHARACTERISTICS
T
Note
1. G
R
I
h
f
C
C
C
G
F
SYMBOL
SYMBOL
j
CBO
T
FE
= 25 C unless otherwise specified.
PNP 5 GHz wideband transistor
th j-s
c
e
re
UM
G
s
UM
UM
is the temperature at the soldering point of the collector tab.
is the maximum unilateral power gain, assuming S
=
10
thermal resistance from junction to
soldering point
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
log
------------------------------------------------------------- - dB.
1
–
S
PARAMETER
PARAMETER
11
S
2
21
1
2
–
S
22
2
Rev. 03 - 28 September 2007
I
I
I
f = 500 MHz; T
I
I
I
I
f = 500 MHz; T
I
R
T
E
C
C
E
C
C
C
C
amb
s
= 0; V
= 0; V
= 70 mA; V
= 70 mA; V
= 0; V
= 0; V
= 50 mA; V
= 50 mA; V
up to T
= 60
= 25 C
12
CB
CB
EB
CE
is zero and
s
CONDITIONS
CONDITIONS
= 10 V;
= 10 V; f = 1 MHz
= 0.5 V; f = 1 MHz
= 10 V; f = 1 MHz
f = 500 MHz;
= 135 C (note 1)
amb
amb
CE
CE
CE
CE
= 10 V
= 10 V;
= 10 V;
= 10 V;
= 25 C
= 25 C
THERMAL RESISTANCE
20
4
MIN. TYP. MAX.
50
5
2
4
1.7
12
3.75
Product specification
40 K/W
BFQ149
100
3 of 7
nA
GHz
pF
pF
pF
dB
dB
UNIT