BLT70,115 NXP Semiconductors, BLT70,115 Datasheet - Page 2

• Manufacturer Part Number: BLT70,115
• Description: TRANS NPN 8V 250MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BLT70,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 8V
• Frequency - Transition: 900MHz
• Power - Max: 2.1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 100mA, 4.8V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Maximum Dc Collector Current: 0.25 A
• Power Dissipation: 2100 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934032210115; BLT70 T/R; BLT70 T/R

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a
plastic SOT223H SMD package.
PINNING - SOT223H
QUICK REFERENCE DATA
RF performance at T
1996 Feb 06
Very high efficiency
Low supply voltage.
Hand-held radio equipment in common emitter class-AB
operation in the 900 MHz communication band.
UHF power transistor
MODE OF OPERATION
PIN
1
2
3
4
CW, class-AB
SYMBOL
s
e
b
e
c
60 C in a common emitter test circuit (see Fig.7).
emitter
base
emitter
collector
(MHz)
DESCRIPTION
900
f
V
(V)
4.8
CE
2
handbook, halfpage
Top view
Fig.1 Simplified outline and symbol.
(mW)
600
P
1
L
2
4
(dB)
G
3
6
p
Product specification
b
MAM043 - 1
BLT70
(%)
60
C
c
e