BLT70,115 NXP Semiconductors, BLT70,115 Datasheet - Page 6

• Manufacturer Part Number: BLT70,115
• Description: TRANS NPN 8V 250MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BLT70,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 8V
• Frequency - Transition: 900MHz
• Power - Max: 2.1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 100mA, 4.8V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Maximum Dc Collector Current: 0.25 A
• Power Dissipation: 2100 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934032210115; BLT70 T/R; BLT70 T/R

Philips Semiconductors
Test circuit information
1996 Feb 06
handbook, full pagewidth
UHF power transistor
V
input
50
S
= V
bias
= typ. 4.8 V.
C1
C2
C3
L1
Fig.7 Common emitter test circuit for class-AB operation at 900 MHz.
C5
C4
L2
C7
L3
C6
L4
R1
T1
L5
V bias
R2
6
DUT
L6
L8
C11
C8
C9
V S
C10
L7
R3
L9
C12
L10
Product specification
C13
C14
BLT70
MGD205
output
50