BLT70,115 NXP Semiconductors, BLT70,115 Datasheet - Page 4

TRANS NPN 8V 250MA SOT223

BLT70,115

Manufacturer Part Number
BLT70,115
Description
TRANS NPN 8V 250MA SOT223
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLT70,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
8V
Frequency - Transition
900MHz
Power - Max
2.1W
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 100mA, 4.8V
Current - Collector (ic) (max)
250mA
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single Dual Emitter
Collector- Emitter Voltage Vceo Max
8 V
Emitter- Base Voltage Vebo
2.5 V
Maximum Dc Collector Current
0.25 A
Power Dissipation
2100 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934032210115
BLT70 T/R
BLT70 T/R
Philips Semiconductors
CHARACTERISTICS
T
1996 Feb 06
handbook, halfpage
V
V
V
I
h
C
C
SYMBOL
j
CES
FE
(BR)CBO
(BR)CEO
(BR)EBO
= 25 C unless otherwise specified.
c
re
UHF power transistor
V
h FE
CE
Fig.3
100
= 4.8 V; T
80
60
40
20
0
0
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
DC current gain as a function of collector
current; typical values.
j
= 25 C.
100
PARAMETER
200
I C (mA)
MGD198
300
open emitter; I
open base; I
open collector; I
V
V
V
V
CE
CE
CB
CE
= 7 V; V
= 4.8 V; I
= 4.8 V; I
= 4.8 V; I
4
handbook, halfpage
CONDITIONS
C
BE
C
E
C
I
E
= 5 mA
C
= i
(pF)
= i
= 0
= 100 mA
= 0; f = 1 MHz
C c
E
= 0.5 mA
Fig.4
e
= 0.2 mA
e
4
3
2
1
0
= 0; f = 1 MHz; T
= 0; f = 1 MHz
0
Collector capacitance as a function of
collector-base voltage; typical values.
4
j
= 25 C.
16
8
2.5
25
8
MIN.
Product specification
12
0.1
3.5
2.5
MAX.
V CB (V)
MGD199
BLT70
16
V
V
V
mA
pF
pF
UNIT

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