BLT70,115 NXP Semiconductors, BLT70,115 Datasheet - Page 8

• Manufacturer Part Number: BLT70,115
• Description: TRANS NPN 8V 250MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BLT70,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 8V
• Frequency - Transition: 900MHz
• Power - Max: 2.1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 100mA, 4.8V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Maximum Dc Collector Current: 0.25 A
• Power Dissipation: 2100 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934032210115; BLT70 T/R; BLT70 T/R

Philips Semiconductors
1996 Feb 06
handbook, full pagewidth
UHF power transistor
Dimensions in mm.
The components are situated on one side of the copper-clad PCB, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Printed-circuit board and component lay-out for 900 MHz class-AB test circuit in Fig.7.
Copper foil
C3
C1
C2
L1
C4
T1
C5
C6
R2
R1
L2
V bias
L3
C7
L5
L4
139
8
L6
Plated through holes
C8
C10
C9
L7
L9
L8
R3
V S
C12
L10
C11
BLT70
C13
MGD206
C14
Product specification
79
BLT70