MRF581 Microsemi Power Products Group, MRF581 Datasheet - Page 2

• Manufacturer Part Number: MRF581
• Description: TRANS NPN 18V 200MA MACRO X
• Manufacturer: Microsemi Power Products Group

Specifications of MRF581

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 18V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 3dB ~ 3.5dB @ 500MHz
• Gain: 13dB ~ 15.5dB
• Power - Max: 1.25W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 50mA, 5V
• Current - Collector (ic) (max): 200mA
• Mounting Type: Surface Mount
• Package / Case: Micro-X ceramic (84C)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MRF581MI; MRF581MI

ELECTRICAL SPECIFICATIONS (Tcase = 25
STATIC
(off)
DYNAMIC
(on)
Symbol
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
COB
HFE
Ftau
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, VBE = 0 Vdc)
Emitter Cutoff Current
(Vbe = 2.5 Vdc)
DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Current-Gain Bandwidth Product
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
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Test Conditions
Test Conditions
°
C)
MRF581
MRF581A
MRF581
MRF581A
Min.
Min.
2.5
18
15
30
50
90
-
-
-
-
MRF581
MRF581G
MRF581A
MRF581AG
Value
Value
Typ.
Typ.
2.0
5.0
-
-
-
-
-
-
Max.
Max.
200
250
0.1
0.1
3.0
-
-
-
-
Unit
Unit
GHz
Vdc
Vdc
Vdc
mA
mA
pF
-