MPSH10_D75Z Fairchild Semiconductor, MPSH10_D75Z Datasheet - Page 2

• Manufacturer Part Number: MPSH10_D75Z
• Description: TRANS RF NPN 25V 50MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of MPSH10_D75Z

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 25V
• Frequency - Transition: 650MHz
• Power - Max: 350mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -

C
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
V
V
I
I
h
V
V
f
C
rb’C
Symbol
CBO
EBO
T
FE
rb
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
cb
Electrical Characteristics
*
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n
Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10)
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
on
sat
c
)
)
Common-Base Feedback Capacitance V
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain - Bandwidth Product
Collector-Base Capacitance
Collector Base Time Constant
Parameter
TA = 25°C unless otherwise noted
I
I
I
V
V
I
I
I
I
f = 100 MHz
V
I
f = 31.8 MHz
C
C
E
C
C
C
C
C
CB
CB
EB
CB
= 1.0 mA, I
= 100 A, I
= 10 A, I
= 4.0 mA, V
= 4.0 mA, I
= 4.0 mA, V
= 4.0 mA, V
= 4.0 mA, V
= 10 V, I
= 25 V, I
= 2.0 V, I
= 10 V, I
Test Conditions
C
E
E
E
B
C
B
E
= 0
= 0, f = 1.0 MHz
CE
CE
CE
CB
= 0, f = 1.0 MHz
= 0
= 0
= 0.4 mA
= 0
= 0
= 10 V
= 10 V
= 10 V,
= 10 V,
Min
0.35
NPN RF Transistor
650
3.0
25
30
60
Max
0.95
0.65
100
100
0.7
0.5
9.0
(continued)
Units
MHz
nA
nA
pF
pF
pS
V
V
V
V
V
3