BT151-1000RT,127 NXP Semiconductors, BT151-1000RT,127 Datasheet - Page 2

• Manufacturer Part Number: BT151-1000RT,127
• Description: THYRISTOR 1000V 12A TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of BT151-1000RT,127

• Package / Case: TO-220AB-3
• Scr Type: Standard Recovery
• Voltage - Off State: 1000V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 2.5mA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 131A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 12A
• Breakover Current Ibo Max: 131 A
• Rated Repetitive Off-state Voltage Vdrm: 1000 V
• Off-state Leakage Current @ Vdrm Idrm: 2.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061435127; BT151-1000RT; BT151-1000RT

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BT151-1000RT_1
Product data sheet
Type number
BT151-1000RT
Symbol
V
V
I
I
I
I
dI
I
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
stg
j
DRM
RRM
t
GM
G(AV)
T
/dt
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
Package
Name
SC-46
Description
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
Conditions
half sine wave; T
see
all conduction angles; see
and
half sine wave; T
surge; see
t = 10 ms
I
dI
over any 20 ms period
TM
12 A thyristor high blocking voltage high operating temperature
G
t = 10 ms
t = 8.3 ms
/dt = 50 mA/ s
Rev. 01 — 6 August 2007
= 20 A; I
Figure 1
5
Figure 2
G
= 50 mA;
mb
j
= 25 C prior to
and
134 C;
3
Figure 4
Min
-
-
-
-
-
-
-
-
-
-
-
-
BT151-1000RT
40
Max
1000
1000
7.5
12
120
131
72
50
2
5
0.5
+150
150
© NXP B.V. 2007. All rights reserved.
Version
SOT78
Unit
V
V
A
A
A
A
A
A/ s
A
W
W
C
C
2
s
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