BT151-1000RT,127 NXP Semiconductors, BT151-1000RT,127 Datasheet - Page 5

• Manufacturer Part Number: BT151-1000RT,127
• Description: THYRISTOR 1000V 12A TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of BT151-1000RT,127

• Package / Case: TO-220AB-3
• Scr Type: Standard Recovery
• Voltage - Off State: 1000V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 2.5mA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 131A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 12A
• Breakover Current Ibo Max: 131 A
• Rated Repetitive Off-state Voltage Vdrm: 1000 V
• Off-state Leakage Current @ Vdrm Idrm: 2.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061435127; BT151-1000RT; BT151-1000RT

NXP Semiconductors
5. Thermal characteristics
Table 4.
BT151-1000RT_1
Product data sheet
Symbol
R
R
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
th(j-mb)
th(j-a)
Z
th(j-mb)
(K/W)
10
10
10
10
1
1
2
3
10
5
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
4
10
3
12 A thyristor high blocking voltage high operating temperature
Rev. 01 — 6 August 2007
Conditions
see
in free air
Figure 6
10
2
10
1
Min
-
-
BT151-1000RT
P
1
Typ
-
60
t
p
T
t
p
© NXP B.V. 2007. All rights reserved.
(s)
001aaa962
Max
1.3
-
=
t
T
t
p
10
Unit
K/W
K/W
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