BT151-1000RT,127 NXP Semiconductors, BT151-1000RT,127 Datasheet - Page 8

• Manufacturer Part Number: BT151-1000RT,127
• Description: THYRISTOR 1000V 12A TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of BT151-1000RT,127

• Package / Case: TO-220AB-3
• Scr Type: Standard Recovery
• Voltage - Off State: 1000V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 2.5mA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 131A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 12A
• Breakover Current Ibo Max: 131 A
• Rated Repetitive Off-state Voltage Vdrm: 1000 V
• Off-state Leakage Current @ Vdrm Idrm: 2.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061435127; BT151-1000RT; BT151-1000RT

NXP Semiconductors
BT151-1000RT_1
Product data sheet
Fig 11. Normalized holding current as a function of
I
H(25 C)
I
H
3
2
1
0
junction temperature
50
0
50
100
003aab826
T
j
( C)
12 A thyristor high blocking voltage high operating temperature
150
Rev. 01 — 6 August 2007
Fig 12. Critical rate of rise of off-state voltage as a
dV
(V/ s)
D
10
10
10
/dt
10
4
3
2
Gate open circuit
function of junction temperature; typical values
0
50
BT151-1000RT
100
© NXP B.V. 2007. All rights reserved.
T
j
003aab827
( C)
150
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