SMBT 3906S E6327 Infineon Technologies, SMBT 3906S E6327 Datasheet - Page 2

• Manufacturer Part Number: SMBT 3906S E6327
• Description: TRANSISTOR ARRAY PNP SW SOT-363
• Manufacturer: Infineon Technologies

Specifications of SMBT 3906S E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60 at 10 uA at 1 V
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 330 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SMBT3906SE6327XT; SP000016694

Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
T
T
T
T
Junction temperature
Storage temperature
1
Thermal Resistance
Parameter
Junction - soldering point
SMBT3906/ MMBT3906
SMBT3906S
SMBT3906U
For calculation of R
S
S
S
S
≤ 71 °C
≤ tbd °C
≤ 115 °C
≤ 105 °C
thJA
please refer to Application Note Thermal Resistance
1)
2
Symbol
V
V
V
I
P
T
T
Symbol
R
C
CEO
CBO
EBO
tot
j
stg
thJS
SMBT3906...MMBT3906
-65 ... 150
Value
Value
≤ 240
≤ 140
≤ 135
330
250
250
330
200
150
40
40
6
2008-02-29
Unit
V
mA
mW
°C
Unit
K/W