MBT3946DW1T1 ON Semiconductor, MBT3946DW1T1 Datasheet
MBT3946DW1T1
Specifications of MBT3946DW1T1
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MBT3946DW1T1 Summary of contents
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... MBT3946DW1T1G Dual General Purpose Transistor The MBT3946DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space premium ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1.0 mAdc −1.0 mAdc Collector −Base Breakdown Voltage ( mAdc ...
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ELECTRICAL CHARACTERISTICS Characteristic Output Admittance ( Vdc 1.0 mAdc 1.0 kHz −10 Vdc −1.0 mAdc 1.0 kHz Noise Figure (V = 5.0 Vdc, I ...
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1.0 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA) C Figure 5. Turn −On Time 500 ...
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I , COLLECTOR CURRENT (mA) C Figure 11. Current Gain 20 (NPN) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2 COLLECTOR ...
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TYPICAL STATIC CHARACTERISTICS 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 1 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 1.2 (NPN 25° BE(sat) ...
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V 10.6 V 300 ns DUTY CYCLE = 2% Figure 19. Delay and Rise Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 (PNP) 7.0 C 5.0 obo C ibo 3.0 2.0 1.0 0.1 0.2 ...
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TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS (V CE 5.0 SOURCE RESISTANCE = 200 1 4.0 SOURCE RESISTANCE = 200 0 3.0 SOURCE RESISTANCE = 2 2.0 ...
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TYPICAL STATIC CHARACTERISTICS 2.0 1.0 0.7 0.5 0.3 (PNP) 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 1.0 (PNP 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 1 25° ...
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... BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 0.65 0.025 0.65 0.025 mm ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBT3946DW1T1/D ...