MBT3946DW1T1 ON Semiconductor, MBT3946DW1T1 Datasheet - Page 6
![TRANS DUAL GP 200MA 40V SOT363](/photos/1/38/13878/sc-70-6_sc-88_sot-363_419b___02_sml.jpg)
MBT3946DW1T1
Manufacturer Part Number
MBT3946DW1T1
Description
TRANS DUAL GP 200MA 40V SOT363
Manufacturer
ON Semiconductor
Datasheet
1.MBT3946DW1T1G.pdf
(10 pages)
Specifications of MBT3946DW1T1
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
150mW
Frequency - Transition
300MHz, 250MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Dc
0534
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
MBT3946DW1T1OSCT
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Part Number
Manufacturer
Quantity
Price
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Quantity:
440
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Manufacturer:
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Part Number:
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Manufacturer:
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Part Number:
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Manufacturer:
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Quantity:
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2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
0
0
0.1
0.01
1.0
T
J
= 25°C
2.0
0.2
0.02
I
Figure 17. “ON” Voltages
C
I
C
= 1.0 mA
5.0
, COLLECTOR CURRENT (mA)
(NPN)
0.3
0.03
10
0.5
V
0.05
CE(sat)
20
0.7
V
@ I
0.07
BE(sat)
C
TYPICAL STATIC CHARACTERISTICS
1.0
/I
B
Figure 16. Collector Saturation Region
V
T
0.1
=10
10 mA
@ I
BE
J
50
= +125°C
C
@ V
/I
B
Figure 15. DC Current Gain
=10
CE
100
2.0
- 55°C
+25°C
I
C
=1.0 V
, COLLECTOR CURRENT (mA)
http://onsemi.com
I
B
, BASE CURRENT (mA)
0.2
3.0
200
(NPN)
6
0.3
5.0
- 0.5
- 1.0
- 1.5
- 2.0
1.0
0.5
30 mA
0
7.0
0
0.5
10
20
0.7
Figure 18. Temperature Coefficients
q
(NPN)
VB
(NPN)
40
FOR V
1.0
q
VC
I
C
(NPN)
20
, COLLECTOR CURRENT (mA)
60
FOR V
BE(sat)
80
30
CE(sat)
2.0
100
50
3.0
120
100 mA
70
+25°C TO +125°C
+25°C TO +125°C
- 55°C TO +25°C
- 55°C TO +25°C
140
V
5.0
100
CE
160
T
= 1.0 V
J
= 25°C
7.0
180
200
10
200