MBT3946DW1T1 ON Semiconductor, MBT3946DW1T1 Datasheet - Page 4
![TRANS DUAL GP 200MA 40V SOT363](/photos/1/38/13878/sc-70-6_sc-88_sot-363_419b___02_sml.jpg)
MBT3946DW1T1
Manufacturer Part Number
MBT3946DW1T1
Description
TRANS DUAL GP 200MA 40V SOT363
Manufacturer
ON Semiconductor
Datasheet
1.MBT3946DW1T1G.pdf
(10 pages)
Specifications of MBT3946DW1T1
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
150mW
Frequency - Transition
300MHz, 250MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Dc
0534
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
MBT3946DW1T1OSCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
MBT3946DW1T1
Manufacturer:
ON
Quantity:
440
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Manufacturer:
panasoni
Quantity:
12 000
Part Number:
MBT3946DW1T1
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MBT3946DW1T1G
Manufacturer:
ON
Quantity:
22 932
Company:
Part Number:
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Manufacturer:
ON
Quantity:
30 000
Part Number:
MBT3946DW1T1G
Manufacturer:
ON/安森美
Quantity:
20 000
500
300
200
100
500
300
200
100
12
10
70
50
30
20
10
70
50
30
20
10
8
6
4
2
0
7
5
7
5
0.1
1.0
1.0
SOURCE RESISTANCE = 500 W
I
I
C
C
(NPN)
(NPN)
/I
= 100 mA
0.2
B
= 20
SOURCE RESISTANCE = 200 W
I
2.0 3.0
2.0 3.0
C
= 1.0 mA
0.4
I
Figure 5. Turn −On Time
SOURCE RESISTANCE = 200 W
I
Figure 9. Noise Figure
I
I
C
C
C
C
Figure 7. Storage Time
/I
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
5.0 7.0
= 0.5 mA
5.0 7.0
B
1.0
= 10
f, FREQUENCY (kHz)
2.0
10
10
SOURCE RESISTANCE = 1.0 k
I
C
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
= 50 mA
t
d
@ V
4.0
20
OB
20
= 0 V
(V
(NPN)
30
30
10
CE
= 5.0 Vdc, T
t
50
50
I
r
20
C
NOISE FIGURE VARIATIONS
@ V
/I
t′
I
B
70
B1
70
s
= 20
I
I
C
CC
= t
C
= I
/I
40
/I
100
100
2.0 V
B
s
B
B2
= 3.0 V
-
= 10
http://onsemi.com
= 10
15 V
40 V
1
/
8
A
t
100
f
200
200
= 25°C, Bandwidth = 1.0 Hz)
(NPN)
4
500
300
200
100
500
300
200
100
70
50
30
20
10
70
50
30
20
10
14
12
10
7
5
7
5
8
6
4
2
0
1.0
1.0
0.1
(NPN)
(NPN)
f = 1.0 kHz
0.2
2.0 3.0
2.0 3.0
I
0.4
C
= 0.5 mA
R
S
I
I
C
C
Figure 10. Noise Figure
, SOURCE RESISTANCE (k OHMS)
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
I
5.0 7.0
5.0 7.0
I
C
Figure 6. Rise Time
C
Figure 8. Fall Time
/I
= 1.0 mA
1.0
B
= 10
10
10
2.0
I
C
/I
4.0
B
20
20
= 20
(NPN)
30
30
10
I
C
50
50
= 100 mA
20
V
I
V
I
70
70
B1
C
CC
CC
I
/I
C
B
= I
100
100
= 50 mA
= 40 V
= 40 V
= 10
40
B2
200
200
100