MBT3946DW1T1 ON Semiconductor, MBT3946DW1T1 Datasheet - Page 2

• Manufacturer Part Number: MBT3946DW1T1
• Description: TRANS DUAL GP 200MA 40V SOT363
• Manufacturer: ON Semiconductor

Specifications of MBT3946DW1T1

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 300MHz, 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Dc: 0534
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MBT3946DW1T1OSCT

2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
SMALL−SIGNAL CHARACTERISTICS
Input Capacitance
(V
(V
Collector −Emitter Breakdown Voltage (Note 2)
(I
(I
Collector −Base Breakdown Voltage
(I
(I
Emitter −Base Breakdown Voltage
(I
(I
Base Cutoff Current
(V
(V
Collector Cutoff Current
(V
(V
DC Current Gain
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
Collector −Emitter Saturation Voltage
(I
(I
(I
(I
Base −Emitter Saturation Voltage
(I
(I
(I
(I
Current −Gain − Bandwidth Product
(I
(I
Output Capacitance
(V
(V
Input Impedance
(V
(V
Voltage Feedback Ratio
(V
(V
Small −Signal Current Gain
(V
(V
C
C
C
C
E
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
EB
EB
CE
CE
CE
CE
CB
CB
CE
CE
CE
CE
CE
CE
= 10 mAdc, I
= −10 mAdc, I
= 1.0 mAdc, I
= −1.0 mAdc, I
= 10 mAdc, I
= −10 mAdc, I
= 0.1 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 50 mAdc, V
= 100 mAdc, V
= −0.1 mAdc, V
= −1.0 mAdc, V
= −10 mAdc, V
= −50 mAdc, V
= −100 mAdc, V
= 10 mAdc, I
= 50 mAdc, I
= −10 mAdc, I
= −50 mAdc, I
= 10 mAdc, I
= 50 mAdc, I
= −10 mAdc, I
= −50 mAdc, I
= 10 mAdc, V
= −10 mAdc, V
= 0.5 Vdc, I
= −0.5 Vdc, I
= 30 Vdc, V
= −30 Vdc, V
= 30 Vdc, V
= −30 Vdc, V
= 5.0 Vdc, I
= −5.0 Vdc, I
= 10 Vdc, I
= −10 Vdc, I
= 10 Vdc, I
= −10 Vdc, I
= 10 Vdc, I
= −10 Vdc, I
C
E
B
B
B
B
C
C
C
C
B
E
C
CE
CE
CE
E
EB
EB
= 0)
= 0)
B
B
B
B
C
C
C
CE
CE
C
B
= 1.0 mAdc)
= 5.0 mAdc)
= 1.0 mAdc)
= 5.0 mAdc)
CE
CE
CE
CE
E
= 1.0 mAdc, f = 1.0 kHz)
= 1.0 mAdc, f = 1.0 kHz)
= 1.0 mAdc, f = 1.0 kHz)
= 0)
= 0)
= 0)
EB
EB
= 0, f = 1.0 MHz)
CE
CE
= 0, f = 1.0 MHz)
= −1.0 mAdc)
= −5.0 mAdc)
= −1.0 mAdc)
= −5.0 mAdc)
CE
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
= 0, f = 1.0 MHz)
= 0)
= 0, f = 1.0 MHz)
= 1.0 Vdc)
= 1.0 Vdc)
= 20 Vdc, f = 100 MHz)
= 3.0 Vdc)
= 3.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
= −20 Vdc, f = 100 MHz)
= −3.0 Vdc)
= −3.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
Characteristic
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
2
(NPN)
(NPN)
(NPN)
(NPN)
(NPN)
(NPN)
(NPN)
(NPN)
(NPN)
(NPN)
(NPN)
(NPN)
(NPN)
(NPN)
(PNP)
(PNP)
(PNP)
(PNP)
(PNP)
(PNP)
(PNP)
(PNP)
(PNP)
(PNP)
(PNP)
(PNP)
(PNP)
(PNP)
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
C
C
h
CEX
I
h
h
h
f
BL
obo
FE
ibo
T
ie
re
fe
−0.65
−5.0
0.65
Min
−40
−40
100
100
300
250
100
100
6.0
1.0
2.0
0.5
0.1
40
60
40
70
60
30
60
80
60
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.25
−0.85
−0.95
Max
−0.4
0.85
0.95
10.0
−50
−50
300
300
400
400
0.2
0.3
4.0
4.5
8.0
8.0
50
50
10
12
10
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
X 10
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
kW
−
−
− 4