MBT3946DW1T1 ON Semiconductor, MBT3946DW1T1 Datasheet - Page 5

• Manufacturer Part Number: MBT3946DW1T1
• Description: TRANS DUAL GP 200MA 40V SOT363
• Manufacturer: ON Semiconductor

Specifications of MBT3946DW1T1

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 300MHz, 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Dc: 0534
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MBT3946DW1T1OSCT

300
200
100
5.0
2.0
1.0
0.5
0.2
70
50
30
20
10
0.1
0.1
0.2
0.2
Figure 13. Input Impedance
0.3
0.3
I
Figure 11. Current Gain
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
0.5
0.5
1.0
1.0
(NPN)
(NPN)
2.0
2.0
(V
3.0
3.0
CE
= 10 Vdc, f = 1.0 kHz, T
5.0
5.0
h PARAMETERS
http://onsemi.com
10
10
(NPN)
5
100
7.0
5.0
3.0
2.0
1.0
0.7
0.5
50
20
10
10
5
2
1
0.1
0.1
A
= 25°C)
0.2
0.2
Figure 14. Voltage Feedback Ratio
Figure 12. Output Admittance
0.3
0.3
I
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
0.5
0.5
1.0
1.0
(NPN)
(NPN)
2.0
2.0
3.0
3.0
5.0
5.0
10
10