MBT3946DW1T1 ON Semiconductor, MBT3946DW1T1 Datasheet - Page 5
![TRANS DUAL GP 200MA 40V SOT363](/photos/1/38/13878/sc-70-6_sc-88_sot-363_419b___02_sml.jpg)
MBT3946DW1T1
Manufacturer Part Number
MBT3946DW1T1
Description
TRANS DUAL GP 200MA 40V SOT363
Manufacturer
ON Semiconductor
Datasheet
1.MBT3946DW1T1G.pdf
(10 pages)
Specifications of MBT3946DW1T1
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
150mW
Frequency - Transition
300MHz, 250MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Dc
0534
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
MBT3946DW1T1OSCT
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Part Number
Manufacturer
Quantity
Price
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MBT3946DW1T1
Manufacturer:
ON
Quantity:
440
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Manufacturer:
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Manufacturer:
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Company:
Part Number:
MBT3946DW1T1G
Manufacturer:
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Part Number:
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Manufacturer:
ON/安森美
Quantity:
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300
200
100
5.0
2.0
1.0
0.5
0.2
70
50
30
20
10
0.1
0.1
0.2
0.2
Figure 13. Input Impedance
0.3
0.3
I
Figure 11. Current Gain
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
0.5
0.5
1.0
1.0
(NPN)
(NPN)
2.0
2.0
(V
3.0
3.0
CE
= 10 Vdc, f = 1.0 kHz, T
5.0
5.0
h PARAMETERS
http://onsemi.com
10
10
(NPN)
5
100
7.0
5.0
3.0
2.0
1.0
0.7
0.5
50
20
10
10
5
2
1
0.1
0.1
A
= 25°C)
0.2
0.2
Figure 14. Voltage Feedback Ratio
Figure 12. Output Admittance
0.3
0.3
I
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
0.5
0.5
1.0
1.0
(NPN)
(NPN)
2.0
2.0
3.0
3.0
5.0
5.0
10
10