MBT3946DW1T1 ON Semiconductor, MBT3946DW1T1 Datasheet - Page 8

• Manufacturer Part Number: MBT3946DW1T1
• Description: TRANS DUAL GP 200MA 40V SOT363
• Manufacturer: ON Semiconductor

Specifications of MBT3946DW1T1

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 300MHz, 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Dc: 0534
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MBT3946DW1T1OSCT

5.0
4.0
3.0
2.0
1.0
300
200
100
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
70
50
30
20
10
0
0.1
0.1
0.1
SOURCE RESISTANCE = 2.0 k
I
C
SOURCE RESISTANCE = 200 W
I
= 100 mA
0.2
C
= 1.0 mA
0.2
0.2
0.4
0.3
Figure 29. Input Impedance
0.3
SOURCE RESISTANCE = 200 W
I
I
Figure 27. Current Gain
I
C
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
= 0.5 mA
1.0
f, FREQUENCY (kHz)
0.5
0.5
Figure 25.
2.0
0.7
0.7
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
1.0
1.0
4.0
SOURCE RESISTANCE = 2.0 k
I
C
= 50 mA
(PNP)
(PNP)
(V
(PNP)
CE
10
2.0
2.0
(V
= − 5.0 Vdc, T
3.0
3.0
CE
20
NOISE FIGURE VARIATIONS
= − 10 Vdc, f = 1.0 kHz, T
5.0
40
5.0
h PARAMETERS
http://onsemi.com
7.0
7.0
100
A
10
10
= 25°C, Bandwidth = 1.0 Hz)
(PNP)
8
100
7.0
5.0
3.0
2.0
1.0
0.7
0.5
12
10
70
50
30
20
10
10
8
6
4
2
0
7
5
0.1
0.1
0.1
A
f = 1.0 kHz
= 25°C)
0.2
0.2
0.2
Figure 30. Voltage Feedback Ratio
0.4
Figure 28. Output Admittance
0.3
R
0.3
g
I
I
, SOURCE RESISTANCE (k OHMS)
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
1.0
0.5
0.5
I
Figure 26.
C
0.7
0.7
2.0
= 0.5 mA
I
C
= 1.0 mA
1.0
1.0
(PNP)
4.0
(PNP)
(PNP)
2.0
2.0
10
3.0
3.0
20
I
C
I
5.0
5.0
C
= 100 mA
40
= 50 mA
7.0
7.0
100
10
10