MBT3946DW1T1 ON Semiconductor, MBT3946DW1T1 Datasheet - Page 9

• Manufacturer Part Number: MBT3946DW1T1
• Description: TRANS DUAL GP 200MA 40V SOT363
• Manufacturer: ON Semiconductor

Specifications of MBT3946DW1T1

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 300MHz, 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Dc: 0534
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MBT3946DW1T1OSCT

2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
0
0
0.1
0.01
1.0
I
C
T
J
= 1.0 mA
= 25°C
(PNP)
2.0
0.2
0.02
5.0
(PNP)
Figure 33. “ON” Voltages
I
C
, COLLECTOR CURRENT (mA)
(PNP)
0.3
0.03
10
0.5
V
0.05
20
BE(sat)
V
CE(sat)
0.7
@ I
0.07
@ I
C
TYPICAL STATIC CHARACTERISTICS
1.0
/I
V
C
B
BE
/I
50
Figure 32. Collector Saturation Region
= 10
10 mA
T
B
0.1
J
@ V
= 10
= +125°C
CE
Figure 31. DC Current Gain
100
= 1.0 V
2.0
- 55°C
+25°C
I
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
I
B
, BASE CURRENT (mA)
0.2
3.0
200
(PNP)
9
0.3
5.0
30 mA
- 0.5
- 1.0
- 1.5
- 2.0
1.0
0.5
0
7.0
0.5
0
q
VC
10
20
0.7
FOR V
Figure 34. Temperature Coefficients
(PNP)
q
VB
40
CE(sat)
1.0
FOR V
I
C
20
, COLLECTOR CURRENT (mA)
60
BE(sat)
30
80
2.0
100
+25°C TO +125°C
- 55°C TO +25°C
50
3.0
120
70
+25°C TO +125°C
100 mA
- 55°C TO +25°C
140
V
5.0
100
CE
T
160
= 1.0 V
J
= 25°C
7.0
180
200
10
200