MBT3946DW1T1 ON Semiconductor, MBT3946DW1T1 Datasheet - Page 9
![TRANS DUAL GP 200MA 40V SOT363](/photos/1/38/13878/sc-70-6_sc-88_sot-363_419b___02_sml.jpg)
MBT3946DW1T1
Manufacturer Part Number
MBT3946DW1T1
Description
TRANS DUAL GP 200MA 40V SOT363
Manufacturer
ON Semiconductor
Datasheet
1.MBT3946DW1T1G.pdf
(10 pages)
Specifications of MBT3946DW1T1
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
150mW
Frequency - Transition
300MHz, 250MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Dc
0534
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
MBT3946DW1T1OSCT
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Manufacturer
Quantity
Price
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Manufacturer:
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Quantity:
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2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
0
0
0.1
0.01
1.0
I
C
T
J
= 1.0 mA
= 25°C
(PNP)
2.0
0.2
0.02
5.0
(PNP)
Figure 33. “ON” Voltages
I
C
, COLLECTOR CURRENT (mA)
(PNP)
0.3
0.03
10
0.5
V
0.05
20
BE(sat)
V
CE(sat)
0.7
@ I
0.07
@ I
C
TYPICAL STATIC CHARACTERISTICS
1.0
/I
V
C
B
BE
/I
50
Figure 32. Collector Saturation Region
= 10
10 mA
T
B
0.1
J
@ V
= 10
= +125°C
CE
Figure 31. DC Current Gain
100
= 1.0 V
2.0
- 55°C
+25°C
I
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
I
B
, BASE CURRENT (mA)
0.2
3.0
200
(PNP)
9
0.3
5.0
30 mA
- 0.5
- 1.0
- 1.5
- 2.0
1.0
0.5
0
7.0
0.5
0
q
VC
10
20
0.7
FOR V
Figure 34. Temperature Coefficients
(PNP)
q
VB
40
CE(sat)
1.0
FOR V
I
C
20
, COLLECTOR CURRENT (mA)
60
BE(sat)
30
80
2.0
100
+25°C TO +125°C
- 55°C TO +25°C
50
3.0
120
70
+25°C TO +125°C
100 mA
- 55°C TO +25°C
140
V
5.0
100
CE
T
160
= 1.0 V
J
= 25°C
7.0
180
200
10
200