MT46H16M16LFBF-6:H Micron Technology Inc, MT46H16M16LFBF-6:H Datasheet - Page 13
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MT46H16M16LFBF-6:H
Manufacturer Part Number
MT46H16M16LFBF-6:H
Description
DRAM Chip DDR SDRAM 256M-Bit 16Mx16 1.8V 60-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Series
-r
Specifications of MT46H16M16LFBF-6:H
Package
60VFBGA
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
166 MHz
Maximum Random Access Time
6.5|5 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (16Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Package / Case
60-VFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT46H16M16LFBF-6:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT46H16M16LFBF-6:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Table 2: VFBGA Ball Descriptions
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN
RAS#, CAS#, WE#
LDQS, UDQS
UDM, LDM
BA0, BA1
DQ[15:0]
DQ[31:0]
DQS[3:0]
Symbol
(60-ball)
(90-ball)
(60-ball)
(90-ball)
(60-ball)
(90-ball)
(60-ball)
(90-ball)
DM[3:0]
CK, CK#
A[12:0]
A[13:0]
V
V
CKE
V
CS#
V
DDQ
SSQ
DD
SS
output
output
Supply
Supply
Supply
Supply
Input/
Input/
Input
Input
Input
Input
Input
Input
Input
Type
Description
Clock: CK is the system clock input. CK and CK# are differential clock inputs. All ad-
dress and control input signals are sampled on the crossing of the positive edge of
CK and the negative edge of CK#. Input and output data is referenced to the cross-
ing of CK and CK# (both directions of the crossing).
Clock enable: CKE HIGH activates, and CKE LOW deactivates, the internal clock sig-
nals, input buffers, and output drivers. Taking CKE LOW enables PRECHARGE power-
down and SELF REFRESH operations (all banks idle), or ACTIVE power-down (row
active in any bank). CKE is synchronous for all functions except SELF REFRESH exit.
All input buffers (except CKE) are disabled during power-down and self refresh
modes.
Chip select: CS# enables (registered LOW) and disables (registered HIGH) the com-
mand decoder. All commands are masked when CS# is registered HIGH. CS# pro-
vides for external bank selection on systems with multiple banks. CS# is considered
part of the command code.
Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command be-
ing entered.
Input data mask: DM is an input mask signal for write data. Input data is masked
when DM is sampled HIGH along with that input data during a WRITE access. DM is
sampled on both edges of DQS. Although DM balls are input-only, the DM loading
is designed to match that of DQ and DQS balls.
Bank address inputs: BA0 and BA1 define to which bank an ACTIVE, READ, WRITE,
or PRECHARGE command is being applied. BA0 and BA1 also determine which
mode register is loaded during a LOAD MODE REGISTER command.
Address inputs: Provide the row address for ACTIVE commands, and the column ad-
dress and auto precharge bit (A10) for READ or WRITE commands, to select one
location out of the memory array in the respective bank. During a PRECHARGE com-
mand, A10 determines whether the PRECHARGE applies to one bank (A10 LOW,
bank selected by BA0, BA1) or all banks (A10 HIGH). The address inputs also provide
the op-code during a LOAD MODE REGISTER command. The maximum address
range is dependent upon configuration. Unused address balls become RFU.
Data input/output: Data bus for x16 and x32.
Data strobe: Output with read data, input with write data. DQS is edge-aligned
with read data, center-aligned in write data. It is used to capture data.
DQ power supply.
DQ ground.
Power supply.
Ground.
13
256Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Ball Assignments and Descriptions
© 2008 Micron Technology, Inc. All rights reserved.
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