MT46H16M16LFBF-6:H Micron Technology Inc, MT46H16M16LFBF-6:H Datasheet - Page 68
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MT46H16M16LFBF-6:H
Manufacturer Part Number
MT46H16M16LFBF-6:H
Description
DRAM Chip DDR SDRAM 256M-Bit 16Mx16 1.8V 60-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Series
-r
Specifications of MT46H16M16LFBF-6:H
Package
60VFBGA
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
166 MHz
Maximum Random Access Time
6.5|5 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (16Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Package / Case
60-VFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT46H16M16LFBF-6:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT46H16M16LFBF-6:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 31: Data Output Timing –
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN
All DQ values, collectively
Command
DQS or LDQS/UDQS
CK#
CK
READ
T0
Notes:
3
2
1. Commands other than NOP can be valid during this cycle.
2. DQ transitioning after DQS transitions define
3. All DQ must transition by
4.
NOP
T1
t
AC is the DQ output window relative to CK and is the long-term component of DQ skew.
CL = 3
1
t
LZ
t
AC and
NOP
T2
t
t
RPRE
DQSCK
t
1
t
DQSCK
LZ
t
AC
T2n
4
T2
t
68
DQSQ after DQS transitions, regardless of
NOP
T3
256Mb: x16, x32 Mobile LPDDR SDRAM
1
T2n
T3n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
DQSCK
t
AC
T3
NOP
4
T4
t
1
DQSQ window.
T3n
T4n
T4
NOP
T5
1
© 2008 Micron Technology, Inc. All rights reserved.
T4n
T5n
READ Operation
t
AC.
T5
NOP
T6
1
Don’t Care
T5n
t
t
t
HZ
HZ
RPST