MT46H16M16LFBF-6:H Micron Technology Inc, MT46H16M16LFBF-6:H Datasheet - Page 60
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MT46H16M16LFBF-6:H
Manufacturer Part Number
MT46H16M16LFBF-6:H
Description
DRAM Chip DDR SDRAM 256M-Bit 16Mx16 1.8V 60-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Series
-r
Specifications of MT46H16M16LFBF-6:H
Package
60VFBGA
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
166 MHz
Maximum Random Access Time
6.5|5 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (16Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Package / Case
60-VFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT46H16M16LFBF-6:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT46H16M16LFBF-6:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 23: Consecutive READ Bursts
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 4, 8, or 16 (if 4, the bursts are concatenated; if 8 or 16, the second burst interrupts
3. Shown with nominal
4. Example applies only when READ commands are issued to same device.
the first).
OUT
n (or b) = data-out from column n (or column b).
CL = 2
NOP
NOP
T1
T1
CL = 3
T1n
D
t
READ
Bank,
n
READ
Bank,
OUT
Col b
Col b
AC,
T2
1
T2
60
t
DQSCK, and
D
n + 1
T2n
T2n
OUT
256Mb: x16, x32 Mobile LPDDR SDRAM
D
D
n + 2
OUT
n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
NOP
T3
OUT
T3
t
DQSQ.
D
Don’t Care
n + 1
T3n
D
n + 3
T3n
OUT
OUT
D
n + 2
OUT
D
T4
NOP
T4
NOP
OUT
b
D
n + 3
T4n
T4n
OUT
D
b + 1
OUT
Transitioning Data
© 2008 Micron Technology, Inc. All rights reserved.
READ Operation
D
T5
NOP
T5
NOP
D
b + 2
OUT
b
OUT
T5n
T5n
D
b + 1
D
b + 3
OUT
OUT