M25P20-VMN6PB NUMONYX, M25P20-VMN6PB Datasheet - Page 32

• Manufacturer Part Number: M25P20-VMN6PB
• Description: Flash Mem Serial-SPI 3.3V 2M-Bit 256K x 8 8ns 8-Pin SO N Tray
• Manufacturer: NUMONYX

Specifications of M25P20-VMN6PB

• Package: 8SO N
• Cell Type: NOR
• Density: 2 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3.3 V
• Sector Size: 64KByte x 4
• Timing Type: Synchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Serial-SPI

Figure 18. Release from Deep Power-down and Read Electronic Signature (RES) Instruction
1. The value of the 8-bit Electronic Signature, for the M25P20, is 11h.
Figure 19. Release from Deep Power-down (RES) Instruction Sequence
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S
C
D
Q
S
C
D
Q
0
Sequence and Data-Out Sequence
Driving Chip Select (S) High after the 8-bit instruction byte has been received by the device,
but before the whole of the 8-bit Electronic Signature has been transmitted for the first time
(as shown in
device was not previously in the Deep Power-down mode, the transition to the Standby
Power mode is immediate. If the device was previously in the Deep Power-down mode,
though, the transition to the Standby Power mode is delayed by t
must remain High for at least t
Power mode, the device waits to be selected, so that it can receive, decode and execute
instructions.
1
High Impedance
2
Instruction
3
4
High Impedance
0
Figure
5
1
6
2
Instruction
7
19), still ensures that the device is put into Standby Power mode. If the
3
MSB
23
8
4
22 21
9 10
3 Dummy Bytes
5
6
RES1
7
3
28 29 30 31 32 33 34 35
(max), as specified in
2
1
Deep Power-down Mode
0
MSB
7
Electronic Signature Out
Deep Power-down Mode
t
RES1
6
5
4
3
Table
36 37 38
2
Stand-by Mode
1
19. Once in the Standby
RES1
0
, and Chip Select (S)
t
RES2
Stand-by Mode
AI04078B
AI04047C