M25P20-VMN6PB NUMONYX, M25P20-VMN6PB Datasheet - Page 39

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M25P20-VMN6PB

Manufacturer Part Number
M25P20-VMN6PB
Description
Flash Mem Serial-SPI 3.3V 2M-Bit 256K x 8 8ns 8-Pin SO N Tray
Manufacturer
NUMONYX
Datasheet

Specifications of M25P20-VMN6PB

Package
8SO N
Cell Type
NOR
Density
2 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
64KByte x 4
Timing Type
Synchronous
Operating Temperature
-40 to 85 °C
Interface Type
Serial-SPI

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Table 17.
1. At 85°C
2. Preliminary data.
3. When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are
Table 18.
1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 21. AC Measurement I/O Waveform
Symbol
Symbol
t
obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. (1 ≤ n ≤
256)
PP
t
t
t
SE
BE
W
C
(3)
L
Load Capacitance
Input Rise and Fall Times
Input Pulse Voltages
Input Timing Reference Voltages
Output Timing Reference Voltages
AC Measurement Conditions
Instruction Times (Device Grade 3)
Alt.
Write Status Register Cycle Time
Page Program Cycle Time (256 Bytes)
Page Program Cycle Time (n Bytes)
Sector Erase Cycle Time
Bulk Erase Cycle Time
Test conditions specified in
0.8V CC
0.2V CC
Input Levels
Parameter
Parameter
Table 10
Timing Reference Levels
Input and Output
and
Min.
0.2V
0.3V
Min.
Table 18
0.7V CC
0.5V CC
0.3V CC
AI07455
CC
CC
V
CC
30
to 0.8V
to 0.7V
n*1.1/256
Typ
/ 2
0.4+
1.5
2.8
(1) (2)
8
1
Max.
5
CC
CC
Max
15
5
3
6
(2)
Unit
pF
ns
V
V
V
Unit
39/55
ms
ms
s
s

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