M25P20-VMN6PB NUMONYX, M25P20-VMN6PB Datasheet - Page 34

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M25P20-VMN6PB

Manufacturer Part Number
M25P20-VMN6PB
Description
Flash Mem Serial-SPI 3.3V 2M-Bit 256K x 8 8ns 8-Pin SO N Tray
Manufacturer
NUMONYX
Datasheet

Specifications of M25P20-VMN6PB

Package
8SO N
Cell Type
NOR
Density
2 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
64KByte x 4
Timing Type
Synchronous
Operating Temperature
-40 to 85 °C
Interface Type
Serial-SPI

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Figure 20. Power-up Timing
Table 8.
1. These parameters are characterized only.
Symbol
V CC (max)
V CC (min)
t
t
V
PUW
VSL
WI
(1)
(1)
V WI
(1)
V CC
V
Time delay to Write instruction
Write Inhibit Voltage (Device grade 6)
Write Inhibit Voltage (Device grade 3)
Power-Up Timing and V
Reset State
CC
Device
of the
(min) to S low
Program, Erase and Write Commands are Rejected by the Device
Chip Selection Not Allowed
Parameter
WI
Threshold
tPUW
tVSL
Read Access allowed
Min.
1.0
1.0
10
1
Device fully
accessible
Max.
2.1
2.1
10
AI04009C
time
Unit
ms
µs
V
V

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