EMD29T2R Rohm Semiconductor, EMD29T2R Datasheet - Page 2

• Manufacturer Part Number: EMD29T2R
• Description: TRANS COMPLEX DGTL PNP/NPN EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMD29T2R

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA, 500mA
• Voltage - Collector Emitter Breakdown (max): 50V, 12V
• Resistor - Base (r1) (ohms): 1K, 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz, 260MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: EMD29T2R; EMD29T2RTR; Q3614586

Transistors
DTr1
DTr2
DTr1/DTr2
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
∗
Power dissipation
Storage temperature
∗
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
∗
Each terminal mounted on a recommended.
Absolute maximum ratings (Ta=25 C)
Each terminal mounted on a recommended.
Each terminal mounted on a recommended.
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
I
I
C (MAX.)
C (MAX.)
Tstg
Tstg
Tstg
V
V
V
V
P
Tj
P
P
I
Tj
CC
O
CC
IN
IN
d
d
d
150(TOTAL)
−55 to +150
−55 to +125
−55 to +150
−10 to +40
−10 to +5
Limits
DTr2
DTr1
−500
100
150
−12
120
150
120
50
50
Unit
mW
Unit
mW ∗
mA
Unit
mW
mA
°C
°C
°C
°C
°C
V
V
V
V
∗
∗
Rev.A
EMD29
2/5