EMD29T2R Rohm Semiconductor, EMD29T2R Datasheet - Page 2
EMD29T2R
Manufacturer Part Number
EMD29T2R
Description
TRANS COMPLEX DGTL PNP/NPN EMT6
Manufacturer
Rohm Semiconductor
Datasheet
1.EMD29T2R.pdf
(6 pages)
Specifications of EMD29T2R
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA, 500mA
Voltage - Collector Emitter Breakdown (max)
50V, 12V
Resistor - Base (r1) (ohms)
1K, 10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V / 140 @ 100mA, 2V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz, 260MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
EMT6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
EMD29T2R
EMD29T2RTR
Q3614586
EMD29T2RTR
Q3614586
Transistors
DTr1
DTr2
DTr1/DTr2
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
∗
Power dissipation
Storage temperature
∗
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
∗
Each terminal mounted on a recommended.
Absolute maximum ratings (Ta=25 C)
Each terminal mounted on a recommended.
Each terminal mounted on a recommended.
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
I
I
C (MAX.)
C (MAX.)
Tstg
Tstg
Tstg
V
V
V
V
P
Tj
P
P
I
Tj
CC
O
CC
IN
IN
d
d
d
150(TOTAL)
−55 to +150
−55 to +125
−55 to +150
−10 to +40
−10 to +5
Limits
DTr2
DTr1
−500
100
150
−12
120
150
120
50
50
Unit
mW
Unit
mW ∗
mA
Unit
mW
mA
°C
°C
°C
°C
°C
V
V
V
V
∗
∗
Rev.A
EMD29
2/5