EMD29T2R Rohm Semiconductor, EMD29T2R Datasheet - Page 5

• Manufacturer Part Number: EMD29T2R
• Description: TRANS COMPLEX DGTL PNP/NPN EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMD29T2R

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA, 500mA
• Voltage - Collector Emitter Breakdown (max): 50V, 12V
• Resistor - Base (r1) (ohms): 1K, 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz, 260MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: EMD29T2R; EMD29T2RTR; Q3614586

Transistors
DTr2
Fig.7 Output current vs. input voltage
500
200
100
500μ
200μ
100μ
50
20
10
10m
1k
50μ
20μ
10μ
5m
2m
1m
5
2
1
100μ 200μ 500μ1m 2m
5μ
2μ
1μ
Fig.10 DC current gain vs. output
0
(OFF characteristics)
Ta=100˚C
0.5
−40˚C
25˚C
OUTPUT CURRENT : I
INPUT VOLTAGE : V
current
1
Ta=100˚C
−40˚C
25˚C
1.5
5m 10m 20m 50m100m
2
I (off)
O
(A)
(V)
V
V
2.5
O
CC
=5V
=5V
3
Fig.8 Input voltage vs. output current
500m
200m
100m
100
50
20
10
2
1
100μ 200μ
5
(ON characteristics)
OUTPUT CURRENT : I
500μ 1m
Ta=−40˚C
100˚C
25˚C
2m
5m 10m 20m 50m 100m
O
(A)
V
O
=0.3V
500m
200m
100m
20m
10m
50m
5m
2m
1m
100μ 200μ 500μ 1m
1
Fig.9 Output voltage vs. output
OUTPUT CURRENT : I
current
Rev.A
2m
Ta=100˚C
5m 10m 20m 50m 100m
−40˚C
25˚C
EMD29
O
(A)
l
O
/l
I
=20
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