EMD29T2R Rohm Semiconductor, EMD29T2R Datasheet - Page 4

• Manufacturer Part Number: EMD29T2R
• Description: TRANS COMPLEX DGTL PNP/NPN EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMD29T2R

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA, 500mA
• Voltage - Collector Emitter Breakdown (max): 50V, 12V
• Resistor - Base (r1) (ohms): 1K, 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz, 260MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: EMD29T2R; EMD29T2RTR; Q3614586

Transistors
DTr1
Electrical characteristic curves
1000
100
1.00
0.10
0.01
10
1
0
1
INPUT VOLTAGE : V
I
O
/I
OUTPUT CURRENT : I
I
= 20/1
0.5
10
I
(off) [ V ]
100
1
V
O
CC
[mA]
= 5[V]
1000
1.5
100
0.1
10
1.00
0.10
0.01
1
1
1
I
OUTPUT CURRENT : I
O
/I
I
= 50/1
OUTPUT CURRENT : Io [mA]
10
10
100
100
O
[mA]
V
O
=0.2V
1000
1000
1000
100
0.1
100
10
10
1
1
1
1
OUTPUT CURRENT : I
OUTPUT CURRENT : I
10
10
Rev.A
100
100
Vo = 5[V]
EMD29
O
[mA]
O
[mA]
V
O
= 0.3V
1000
1000
4/5