EMD29T2R Rohm Semiconductor, EMD29T2R Datasheet - Page 3

• Manufacturer Part Number: EMD29T2R
• Description: TRANS COMPLEX DGTL PNP/NPN EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMD29T2R

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA, 500mA
• Voltage - Collector Emitter Breakdown (max): 50V, 12V
• Resistor - Base (r1) (ohms): 1K, 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz, 260MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: EMD29T2R; EMD29T2RTR; Q3614586

Transistors
DTr1
DTr2
∗
∗
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Electrical characteristics (Ta=25 C)
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Characteristics of built-in transistor.
Characteristics of built-in transistor.
Parameter
Parameter
∗
∗
Symbol
Symbol
Vo
R
Vo
R
Vl
VI
VI
I
Vl
I
O(off)
O(off)
R
G
2
R
G
2
f
f
I
(off)
/R
I
(on)
T
(off)
(on)
/R
T
(on)
I
(on)
I
1
1
I
I
1
1
Min.
−2.5
Min.
140
0.7
0.8
30
−
−
−
−
−
8
−
3
−
−
−
−
7
Typ.
Typ.
−60
100
260
250
1.0
10
10
−
−
−
−
−
−
−
−
−
−
1
Max.
−300
Max.
−0.3
−6.4
−0.5
1.3
300
880
0.5
0.5
13
1.2
12
−
−
−
−
−
−
MHz
MHz
Unit
Unit
mV
mA
μA
mV
μA
kΩ
μA
kΩ
V
V
−
−
V
V
−
−
V
V
I
V
V
V
V
V
V
I
V
V
V
V
O
O
CC
O
I
CC
O
CE
CC
O
I
CC
O
CE
= −100mA, I
=10mA, I
= −5V
=5V
= −0.3V / Io= −20mA
= −2V / Io= −100mA
=0.3V / Io=2mA
=5V / Io=5mA
= −5V / Io= −100uA
= −12V / V
= −10V / I
=10V / I
=5V / Io=100uA
=50V / V
I
Conditions
=0.5mA
Conditions
E
I
= −5mA, f=100MHz
=0V
E
I
I
=5mA, f=100MHz
= −5mA
=0V
Rev.A
−
−
−
−
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