PBSS8110T,215 NXP Semiconductors, PBSS8110T,215 Datasheet
PBSS8110T,215
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PBSS8110T T/R
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PBSS8110T,215 Summary of contents
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DATA SHEET dbook, halfpage PBSS8110T 100 NPN low V Product data sheet Supersedes data of 2003 Jul 28 DISCRETE SEMICONDUCTORS M3D088 (BISS) transistor CEsat 2003 Dec 22 ...
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... NXP Semiconductors 100 NPN low V (BISS) transistor CEsat FEATURES • SOT23 package • Low collector-emitter saturation voltage V • High collector current capability: I • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Major application segments – Automotive 42 V power – ...
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... NXP Semiconductors 100 NPN low V (BISS) transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I base current (DC total power dissipation ...
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... NXP Semiconductors 100 NPN low V (BISS) transistor CEsat THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to th( j-a) ambient Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm ...
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... NXP Semiconductors 100 NPN low V (BISS) transistor CEsat (K/W) (1) ( (3) (4) (5) (6) (7) 10 (8) (9) (10) 1 −5 − (1) δ = 1.0. (3) δ = 0.5. (2) δ = 0.75. (4) δ = 0.03. Fig.4 Transient thermal impedance as a function of pulse time for collector 1 cm 2003 Dec 22 −3 −2 − (5) δ = 0.2. ...
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... NXP Semiconductors 100 NPN low V (BISS) transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER I collector-base cut-off current CBO I collector-emitter cut-off current CES I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation voltage I CEsat R equivalent on-resistance CEsat V base-emitter saturation voltage ...
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... NXP Semiconductors 100 NPN low V (BISS) transistor CEsat 600 h FE 400 200 0 − 100 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.5 DC current gain as a function of collector current; typical values. 1 handbook, halfpage V CEsat (V) −1 10 −2 10 − 10 100 °C. ...
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... NXP Semiconductors 100 NPN low V (BISS) transistor CEsat 10 V CEsat (V) 1 −1 10 −2 10 − 50 °C. T amb Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 10 handbook, halfpage V BEsat (V) 1 −1 10 − 20 °C. T amb Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. ...
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... NXP Semiconductors 100 NPN low V (BISS) transistor CEsat (A) 1.6 1.2 0.8 0 °C. T amb = 3500 μA. = 2100 μA. ( 3150 μA. = 1750 μA. ( 2800 μA. = 1400 μA. ( 2450 μA. = 1050 μA. ( Fig.13 Collector current as a function of collector-emitter voltage; typical values. ...
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... NXP Semiconductors 100 NPN low V (BISS) transistor CEsat PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2003 Dec scale 3.0 1.4 2.5 1.9 0.95 2.8 1 ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...