PBSS8110T,215 NXP Semiconductors, PBSS8110T,215 Datasheet - Page 7

TRANS NPN 100V 1A SOT23

PBSS8110T,215

Manufacturer Part Number
PBSS8110T,215
Description
TRANS NPN 100V 1A SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS8110T,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
200mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 250mA, 10V
Power - Max
480mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
480 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4344-2
934057672215
PBSS8110T T/R
PBSS8110T T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS8110T,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
2003 Dec 22
handbook, halfpage
100 V, 1 A
NPN low V
V CEsat
V
(1) T
(2) T
(3) T
Fig.5
I
(1) T
(2) T
(3) T
Fig.7
C
CE
/I
(V)
h
B
10
10
600
FE
400
200
= 10 V.
= 10.
amb
amb
amb
−1
−2
amb
amb
amb
0
10
10
1
−1
−1
= 100 °C.
= 25 °C.
= −55 °C.
= 100 °C.
= 25 °C.
= −55 °C.
DC current gain as a function of collector
current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
1
CEsat
10
10
(BISS) transistor
10
10
(1)
(2)
(3)
2
(1)
(2)
(3)
2
10
10
3
3
I
I C (mA)
C
mle352
(mA)
MLE366
10
10
4
4
7
handbook, halfpage
handbook, halfpage
V
(1) T
(2) T
(3) T
Fig.6
V CEsat
I
T
Fig.8
C
CE
amb
/I
V BE
(V)
(V)
B
10
10
1.2
0.8
0.4
= 10 V.
= 20.
= 25 °C.
−1
−2
amb
amb
amb
0
10
10
1
−1
−1
= −55 °C.
= 25 °C.
= 100 °C.
Base-emitter voltage as a function of
collector current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
1
10
10
10
10
(1)
(2)
(3)
2
2
PBSS8110T
Product data sheet
10
10
3
3
I C (mA)
I C (mA)
MLE362
MLE353
10
10
4
4

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