PBSS8110T,215 NXP Semiconductors, PBSS8110T,215 Datasheet - Page 9

TRANS NPN 100V 1A SOT23

PBSS8110T,215

Manufacturer Part Number
PBSS8110T,215
Description
TRANS NPN 100V 1A SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS8110T,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
200mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 250mA, 10V
Power - Max
480mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
480 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4344-2
934057672215
PBSS8110T T/R
PBSS8110T T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS8110T,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
2003 Dec 22
handbook, halfpage
100 V, 1 A
NPN low V
R CEsat
T
(1) I
(2) I
(3) I
(4) I
Fig.13 Collector current as a function of
I
T
Fig.15 Collector-emitter equivalent on-resistance
C
amb
amb
/I
(Ω)
(A)
B
10
I
1.6
1.2
0.8
0.4
C
10
10
= 20.
= 25 °C.
B
B
B
B
= 25 °C.
10
2
0
−1
10
1
= 3500 μA.
= 3150 μA.
= 2800 μA.
= 2450 μA.
3
2
0
−1
collector-emitter voltage; typical values.
as a function of collector current; typical
values.
1
1
CEsat
(5) I
(6) I
(7) I
(8) I
10
2
B
B
B
B
= 2100 μA.
= 1750 μA.
= 1400 μA.
= 1050 μA.
(BISS) transistor
10
3
(2)
2
(10)
(6)
(7)
(8)
(9)
(1)
(3)
(4)
(5)
10
4
(9) I
(10) I
V
3
I C (mA)
CE
mle358
B
B
MLE360
(V)
= 700 μA.
= 350 μA.
10
5
4
9
handbook, halfpage
handbook, halfpage
R CEsat
R CEsat
I
(1) T
(2) T
(3) T
Fig.14 Collector-emitter equivalent on-resistance
I
T
Fig.16 Collector-emitter equivalent on-resistance
C
C
amb
/I
/I
(Ω)
(Ω)
B
B
10
10
10
10
10
10
= 10.
= 50.
= 25 °C.
10
10
−1
−1
amb
amb
amb
10
10
1
1
3
2
3
2
−1
−1
= 100 °C.
= 25 °C.
= −55 °C.
as a function of collector current; typical
values.
as a function of collector current; typical
values.
1
1
10
10
10
10
(1)
(3)
2
2
PBSS8110T
(2)
Product data sheet
10
10
3
3
I C (mA)
I C (mA)
MLE359
MLE361
10
10
4
4

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