2N6517TA Fairchild Semiconductor, 2N6517TA Datasheet - Page 2
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2N6517TA
Manufacturer Part Number
2N6517TA
Description
TRANSISTOR NPN 350V 500MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N6517BU.pdf
(6 pages)
Specifications of 2N6517TA
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
350V
Vce Saturation (max) @ Ib, Ic
1V @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 50mA, 10V
Power - Max
625mW
Frequency - Transition
200MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
350 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
625 mW
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
30
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N6517TA
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
© 2010 Fairchild Semiconductor Corporation
2N6517 Rev. B1
Electrical Characteristics
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Symbol
V
V
V
CE(sat)
BE(sat)
BE(on)
C
f
ob
T
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capatitance
Current Gain Bandwidth Product *
Base-Emitter On Voltage
Parameter
(Continued) T
a
= 25°C unless otherwise noted
I
I
I
I
I
I
I
V
I
I
C
C
C
C
C
C
C
C
C
CB
= 10mA, I
= 20mA, I
= 30mA, I
= 50mA, I
= 10mA, I
= 20mA, I
= 30mA, I
= 10mA, V
= 100mA, V
2
= 20V, I
Conditions
B
B
B
B
B
B
B
E
CE
= 1mA
= 2mA
= 3mA
= 5mA
= 1mA
= 2mA
= 3mA
= 0, f = 1MHz
CE
= 20V, f = 20MHz
= 10V
Min.
40
Max.
0.35
0.75
0.85
200
0.3
0.5
0.9
1
6
2
www.fairchildsemi.com
Units
MHz
pF
V
V
V
V
V
V
V
V