2N6517TA Fairchild Semiconductor, 2N6517TA Datasheet - Page 2

• Manufacturer Part Number: 2N6517TA
• Description: TRANSISTOR NPN 350V 500MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N6517TA

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 1V @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 50mA, 10V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 350 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 30
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

© 2010 Fairchild Semiconductor Corporation
2N6517 Rev. B1
Electrical Characteristics
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Symbol
V
V
V
CE(sat)
BE(sat)
BE(on)
C
f
ob
T
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capatitance
Current Gain Bandwidth Product *
Base-Emitter On Voltage
Parameter
(Continued) T
a
= 25°C unless otherwise noted
I
I
I
I
I
I
I
V
I
I
C
C
C
C
C
C
C
C
C
CB
= 10mA, I
= 20mA, I
= 30mA, I
= 50mA, I
= 10mA, I
= 20mA, I
= 30mA, I
= 10mA, V
= 100mA, V
2
= 20V, I
Conditions
B
B
B
B
B
B
B
E
CE
= 1mA
= 2mA
= 3mA
= 5mA
= 1mA
= 2mA
= 3mA
= 0, f = 1MHz
CE
= 20V, f = 20MHz
= 10V
Min.
40
Max.
0.35
0.75
0.85
200
0.3
0.5
0.9
1
6
2
www.fairchildsemi.com
Units
MHz
pF
V
V
V
V
V
V
V
V