PBSS4220V,115 NXP Semiconductors, PBSS4220V,115 Datasheet - Page 7

• Manufacturer Part Number: PBSS4220V,115
• Description: TRANS NPN 20V 2A LOW SAT SOT666
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS4220V,115

• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 350mV @ 200mA, 2A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1A, 2V
• Power - Max: 900mW
• Frequency - Transition: 210MHz
• Mounting Type: Surface Mount
• Package / Case: SS Mini-6 (SOT-666)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059259115; PBSS4220V T/R; PBSS4220V T/R

NXP Semiconductors
PBSS4220V_2
Product data sheet
Fig 7.
Fig 9.
V
BEsat
(V)
(A)
I
(1) T
(2) T
(3) T
C
1.2
1.0
0.8
0.6
0.4
0.2
2.0
1.6
1.2
0.8
0.4
0
10
I
Base-emitter saturation voltage as a function
of collector current; typical values
0
T
Collector current as a function of
collector-emitter voltage; typical values
−1
C
amb
amb
amb
amb
/I
B
= 20
= −55 °C
= 25 °C
= 100 °C
= 25 °C
1
1
I
B
(mA) = 8.0
10
2
(1)
(2)
(3)
10
3
2
10
4
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3
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7.2
6.4
5.6
4.8
4.0
3.2
2.4
1.6
0.8
V
I
C
CE
(mA)
(V)
Rev. 02 — 11 December 2009
10
5
4
Fig 8.
Fig 10. Collector-emitter saturation resistance as a
R
R
CEsat
CEsat
(Ω)
(Ω)
10
(1) T
(2) T
(3) T
10
(1) I
(2) I
(3) I
10
10
10
10
10
−1
−1
1
1
2
10
3
2
10
I
Collector-emitter saturation resistance as a
function of collector current; typical values
T
function of collector current; typical values
−1
C
−1
C
C
C
amb
amb
amb
amb
/I
/I
/I
/I
20 V, 2 A NPN low V
B
B
B
B
= 20
= 100
= 50
= 10
= 100 °C
= 25 °C
= −55 °C
= 25 °C
1
1
(1)
(2)
(3)
10
10
10
10
PBSS4220V
2
2
CEsat
© NXP B.V. 2009. All rights reserved.
10
10
(BISS) transistor
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006aaa669
3
3
I
I
(1)
(2)
(3)
C
C
(mA)
(mA)
10
10
4
4
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